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        ? 2003 IXYS All rights reserved IXYS reserves the right to change limits, conditions and dimensions. Rectifier Diode ISOPLUS220TM Electrically Isolated Back Surface Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance(15pF typical) International standard package Epoxy meets UL 94V-0 C A C A ISOPLUS 220TM Isolated back surface* Symbol Conditions Maximum Ratings IFRMS IFAV 60 A TC = 95 °C; 180O sine (RMS current limited) 30 A IFSM T VVJR = 45°C; t = 10 ms (50 Hz), sine 200 A = 0 V; t = 8.3 ms (60 Hz), sine 210 A T VVJR = 150°C; t = 10 ms (50 Hz), sine 175 A = 0 V; t = 8.3 ms (60 Hz), sine 185 A I2t T VVJR = 45°C; t = 10 ms (50 Hz), sine 200 A2s = 0 V; t = 8.3 ms (60 Hz), sine 185 A2s ISOPLUS220 Outline (2 leads) T VVJR = 150°C; t = 10 ms (50 Hz), sine 155 A2s = 0 V; t = 8.3 ms (60 Hz), sine 145 A2s TVJ TVJM Tstg -55...+150 °C 150 °C -55...+150 °C TL 1.6 mm (0.062 in.) from case for 10 s 260 °C VISOL 50/60 Hz RMS; IISOL ≤ 1 mA 2500 V~ FC Mounting Force 11...65 / 2.4...11 N / ib Weight typical 2 g VRRM = 800 - 1200 V IF(AV)M= 30 A DSI 30 VRSM VRRM Type V V 900 800 DSI 30-08AC 1300 1200 DSI 30-12AC Symbol Conditions Characteristic Values typ. max. IR TVJ = 25°C; V R = V T RRM VJ = T VJM;VR = VRRM 0.05 mA 1.5 mA VF IF = 45 A; T VJ = 25°C 1.45 V V r TO T For power loss calculations only 0.80 V TVJ = T VJM 15 m? R RthJCthCH 1.1 K/W 0.6 K/W Note: See DSI 30..A data sheet for electrical characteristic curves. DS98791A(07/03) Preliminary Data Sheet |